View IRFPS30N60K_3668218.PDF datasheet online --- IC-ON-LINE

Datasheet File OCR Text:

IRFPS30N60K 7/26/02 www.irf.com 1 smps mosfet hexfet power mosfet switch mode power supply (smps) uninterruptible power supply high speed power switching benefits applications low gate charge qg results in simple drive requirement improved gate, avalanche and dynamic dv/dt ruggedness fully characterized capacitance and avalanche voltage and current v dss r ds(on) typ. i d 600v 160m ? 30a parameter max. units i d @ t c = 25c continuous drain current, v gs @ 10v 30 i d @ t c = 100c continuous drain current, v gs @ 10v 19 a i dm pulsed drain current 120 p d @t c = 25c power dissipation 450 w linear derating factor 3.6 w/c v gs gate-to-source voltage 30 v dv/dt peak diode recovery dv/dt 10 v/ns t j operating junction and -55 to + 150 t stg storage temperature range soldering temperature, for 10 seconds 300 (1.6mm from case ) c absolute maximum ratings symbol parameter typ. max. units e as single pulse avalanche energy ??? 520 mj i ar avalanche current ??? 30 a e ar repetitive avalanche energy ??? 45 mj avalanche characteristics symbol parameter typ. max. units r jc junction-to-case ??? 0.28 r cs case-to-sink, flat, greased surface 0.24 ??? c/w r ja junction-to-ambient ??? 40 thermal resistance super - 247?

2 www.irf.com symbol parameter min. typ. max. units conditions i s continuous source current mosfet symbol (body diode) ??? ??? showing the i sm pulsed source current integral reverse (body diode) ??? ??? p-n junction diode. v sd diode forward voltage ??? ??? 1.5 v t j = 25c, i s = 30a, v gs = 0v t rr reverse recovery time ??? 640 960 ns t j = 25c, i f = 30a q rr reverse recoverycharge ??? 11 16 c di/dt = 100a/s i rrm reverse recoverycurrent ??? 31 ??? a t on forward turn-on time intrinsic turn-on time is negligible (turn-on is dominated by l s +l d ) symbol parameter min. typ. max. units conditions g fs forward transconductance 16 ??? ??? s v ds = 50v, i d = 18a q g total gate charge ??? ??? 220 i d = 30a q gs gate-to-source charge ??? ??? 64 nc v ds = 480v q gd gate-to-drain ("miller") charge ??? ??? 110 v gs = 10v t d(on) turn-on delay time ??? 29 ??? v dd = 300v t r rise time ??? 120 ??? i d = 30a t d(off) turn-off delay time ??? 56 ??? r g = 3.9 ? t f fall time ??? 50 ??? v gs = 10v c iss input capacitance ??? 5870 ??? v gs = 0v c oss output capacitance ??? 530 ??? v ds = 25v c rss reverse transfer capacitance ??? 54 ??? pf ? = 1.0mhz c oss output capacitance ??? 6920 ??? v gs = 0v, v ds = 1.0v, ? = 1.0mhz c oss output capacitance ??? 140 ??? v gs = 0v, v ds = 480v, ? = 1.0mhz c oss eff. effective output capacitance ??? 270 ??? v gs = 0v, v ds = 0v to 480v dynamic @ t j = 25c (unless otherwise specified) ns s d g diode characteristics 30 120 symbol parameter min. typ. max. units conditions v (br)dss drain-to-source breakdown voltage 600 ??? ??? v v gs = 0v, i d = 250a ? v (br)dss / ? t j breakdown voltage temp. coefficient ??? 0.66 ??? v/c reference to 25c, i d = 1ma r ds(on) static drain-to-source on-resistance ??? 160 190 m ? v gs = 10v, i d = 18a v gs(th) gate threshold voltage 3.0 ??? 5.0 v v ds = v gs , i d = 250a ??? ??? 50 a v ds = 600v, v gs = 0v ??? ??? 250 v ds = 480v, v gs = 0v, t j = 125c gate-to-source forward leakage ??? ??? 100 v gs = 30v gate-to-source reverse leakage ??? ??? -100 na v gs = -30v static @ t j = 25c (unless otherwise specified) i gss i dss drain-to-source leakage current repetitive rating; pulse width limited by max. junction temperature. i sd 30a, di/dt 420a/s, v dd v (br)dss , t j 150c starting t j = 25c, l = 1.1mh, r g = 25 ? , i as = 30a pulse width 300s; duty cycle 2%. c oss eff. is a fixed capacitance that gives the same charging time as c oss while v ds is rising from 0 to 80% v dss

www.irf.com 3 fig 4. normalized on-resistance vs. temperature fig 2. typical output characteristics fig 1. typical output characteristics fig 3. typical transfer characteristics -60 -40 -20 0 20 40 60 80 100 120 140 160 0.0 0.5 1.0 1.5 2.0 2.5 3.0 t , junction temperature ( c) r , drain-to-source on resistance (normalized) j ds(on) v = i = gs d 10v 30a 0.1 1 10 100 v ds , drain-to-source voltage (v) 0.01 0.1 1 10 100 i d , d r a i n - t o - s o u r c e c u r r e n t ( a ) 5.0v 20s pulse width tj = 25c vgs top 15v 12v 10v 8.0v 7.0v 6.0v 5.5v bottom 5.0v 0.1 1 10 100 v ds , drain-to-source voltage (v) 0.1 1 10 100 i d , d r a i n - t o - s o u r c e c u r r e n t ( a ) 5.0v 20s pulse width tj = 150c vgs top 15v 12v 10v 8.0v 7.0v 6.0v 5.5v bottom 5.0v 5.0 6.0 7.0 8.0 9.0 v gs , gate-to-source voltage (v) 0.1 1.0 10.0 100.0 i d , d r a i n - t o - s o u r c e c u r r e n t ( a ) t j = 25c t j = 150c v ds = 50v 20s pulse width

4 www.irf.com fig 8. maximum safe operating area fig 6. typical gate charge vs. gate-to-source voltage fig 5. typical capacitance vs. drain-to-source voltage fig 7. typical source-drain diode forward voltage 1 10 100 1000 v ds , drain-to-source voltage (v) 10 100 1000 10000 100000 1000000 c , c a p a c i t a n c e ( p f ) coss crss ciss v gs = 0v, f = 1 mhz c iss = c gs + c gd , c ds shorted c rss = c gd c oss = c ds + c gd 0 40 80 120 160 200 240 q g total gate charge (nc) 0 4 8 12 16 20 v g s , g a t e - t o - s o u r c e v o l t a g e ( v ) v ds = 480v vds= 300v vds= 120v i d = 30a 0.2 0.4 0.6 0.8 1.0 1.2 1.4 v sd , source-todrain voltage (v) 0.1 1.0 10.0 100.0 i s d , r e v e r s e d r a i n c u r r e n t ( a ) t j = 25c t j = 150c v gs = 0v 1 10 100 1000 10000 v ds , drain-tosource voltage (v) 0.1 1 10 100 1000 i d , d r a i n - t o - s o u r c e c u r r e n t ( a ) tc = 25c tj = 150c single pulse 1msec 10msec operation in this area limited by r ds (on) 100sec

www.irf.com 5 fig 10a. switching time test circuit v ds 90% 10% v gs t d(on) t r t d(off) t f fig 10b. switching time waveforms
1 0.1 % + - fig 11. maximum effective transient thermal impedance, junction-to-case fig 9. maximum drain current vs. case temperature 0.001 0.01 0.1 1 0.00001 0.0001 0.001 0.01 0.1 1 notes: 1. duty factor d = t / t 2. peak t = p x z + t 1 2 j dm thjc c p t t dm 1 2 t , rectangular pulse duration (sec) thermal response (z ) 1 thjc 0.01 0.02 0.05 0.10 0.20 d = 0.50 single pulse (thermal response) 25 50 75 100 125 150 0 6 12 18 24 30 t , case temperature ( c) i , drain current (a) c d

6 www.irf.com q g q gs q gd v g charge d.u.t. v ds i d i g 3ma v gs .3 f 50k ? .2 f 12v current regulator same type as d.u.t. current sampling resistors + - fig 13b. gate charge test circuit fig 13a. basic gate charge waveform fig 12c. maximum avalanche energy vs. drain current fig 12b. unclamped inductive waveforms fig 12a. unclamped inductive test circuit t p v (br)dss i as r g i as 0.01 ? t p d.u.t l v ds + - v dd driver a 15v 20v 25 50 75 100 125 150 0 200 400 600 800 1000 starting t , junction temperature ( c) e , single pulse avalanche energy (mj) j as i d top bottom 13a 19a 30a

www.irf.com 7 p.w. period di/dt diode recovery dv/dt ripple 5% body diode forward drop re-applied voltage reverse recovery current body diode forward current v gs =10v v dd i sd driver gate drive d.u.t. i sd waveform d.u.t. v ds waveform inductor curent d = p. w . period + - + + + - - - fig 14. for n-channel hexfet power mosfets

? ? ? ! "" ? #
$ $ ? %& ? ' ( ? %) $

8 www.irf.com super-247? package outline b ? 1.60 [.063] 12 0.25 [.010] b a 3 0.13 [.005] 2.35 [.092] 1.65 [.065] 2.15 [.084] 1.45 [.058] 5.50 [.216] 4.50 [.178] e e 3x 1.60 [.062] 1.45 [.058] 16.10 [.632] 15.10 [.595] 20.80 [.818] 19.80 [.780] 14.80 [.582] 13.80 [.544] 4.25 [.167] 3.85 [.152] 5.45 [.215] 1.30 [.051] 0.70 [.028] 13.90 [.547] 13.30 [.524] 16.10 [.633] 15.50 [.611] 4 0.25 [.010] ba 4 3.00 [.118] 2.00 [.079] a 2x r max. section e-e 2x 1.30 [.051] 1.10 [.044] 3x 1. dimens ioning and t ole rancing per as me y14.5m-1994. 2. dimensions are s hown in millime t ers [inche s] 3. cont r ol l ing dime ns ion: mil l ime t e r not es : 4. out line conf orms t o jedec out line t o-274aa 3 - s ource 2 - drain 1 - gat e 4 - drain 3 - emitter 4 - collector 1 - gat e 2 - collector l e ad as s i gnme nt s mos f e t igbt c data and specifications subject to change without notice. this product has been designed and qua lified for the industria l market. qualification standards can be found on ir?s web site. ir world headquarters: 233 kansas st., el segundo, california 90245, usa tel: (310) 252-7105 tac fax: (310) 252-7903 visit us at www.irf.com for sales contact information . 7/02

▲Up To Search▲

Price & Availability of IRFPS30N60K

	To Download IRFPS30N60K Datasheet File
If you can't view the Datasheet, Please click here to try to view without PDF Reader .